Toshiba Semiconductor and Storage TK1K9A60F,S4X

Product Details

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Base Part Number

STU3N

Vgs(th) (Max) @ Id

4.5V @ 50µA

Operating Temperature

-

Series

SuperMESH3™

Rds On (Max) @ Id, Vgs

3.8Ohm @ 500mA, 10V

FET Type

N-Channel

Power Dissipation (Max)

27W (Tc)

Packaging

Tube

Supplier Device Package

I-PAK

Vgs (Max)

±30V

Gate Charge (Qg) (Max) @ Vgs

6nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

450V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

150pF @ 25V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

1.8A (Tc)