Toshiba Semiconductor and Storage TK16V60W,LVQ

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

23mOhm @ 6.2A, 10V

Series

-

Power Dissipation (Max)

540mW (Ta), 6.25W (Tc)

FET Type

N-Channel

Supplier Device Package

6-TSOP

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

492pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

6.2A (Ta)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

SC-74, SOT-457

Vgs(th) (Max) @ Id

2.5V @ 250µA