Toshiba Semiconductor and Storage TK15S04N1L,LQ

Product Details

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)

Vgs(th) (Max) @ Id

4V @ 150µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

2.1mOhm @ 80A, 10V

Series

OptiMOS™

Power Dissipation (Max)

214W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO263-7-3

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

145nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

9600pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Part Status

Discontinued at Digi-Key

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount