Toshiba Semiconductor and Storage TK14N65W,S1F

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

550V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 100V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

3.5V @ 660µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

199mOhm @ 9.9A, 10V

Series

CoolMOS™

Power Dissipation (Max)

139W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO220-3-1

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V