Images are for reference only. See Product Specifications for product details
Toshiba Semiconductor and Storage TK14G65W,RQ
MOSFET N-CH 650V 13.7A D2PAK
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 1819
Product Details
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 7A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number
- STD8N
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- 150°C (TJ)
- Series
- MDmesh™ V
- Rds On (Max) @ Id, Vgs
- 600mOhm @ 3.5A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 70W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- DPAK
- Vgs (Max)
- ±25V
- Gate Charge (Qg) (Max) @ Vgs
- 15nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 650V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 690pF @ 100V