Toshiba Semiconductor and Storage TK14C65W,S1Q

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

165mOhm @ 12A, 10V

Series

CoolMOS™

Power Dissipation (Max)

192W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO262-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

52nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

650V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 100V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Vgs(th) (Max) @ Id

3.5V @ 790µA