Images are for reference only. See Product Specifications for product details
Toshiba Semiconductor and Storage TK13A60D(STA4,Q,M)
MOSFET N-CH 600V 13A TO220SIS
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 2.8
- Stock
- 2157
Product Details
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 2.2V @ 1mA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.3mOhm @ 25A, 10V
- Series
- -
- Power Dissipation (Max)
- 338W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220AB
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 243nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 14850pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 120A (Tc)