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Toshiba Semiconductor and Storage TK13A50D(STA4,Q,M)

MOSFET N-CH 500V 13A TO-220SIS

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
2.45
Stock
0

Product Details

Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
500V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
1830pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
5.5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
500mOhm @ 6A, 10V
Series
Polar™
Power Dissipation (Max)
200W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-263 (IXTA)
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
29nC @ 10V