Toshiba Semiconductor and Storage TK13A45D(STA4,Q,M)

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

12000pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

240A (Tc)

Part Status

Discontinued at Digi-Key

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

8-PowerSFN

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

0.9mOhm @ 80A, 10V

Series

Automotive, AEC-Q101, PowerTrench®

Power Dissipation (Max)

357W (Tj)

FET Type

N-Channel

Supplier Device Package

8-HPSOF

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

188nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V