Toshiba Semiconductor and Storage TK12V60W,LVQ

Product Details

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 300V

FET Feature

Super Junction

Current - Continuous Drain (Id) @ 25°C

15.8A (Ta)

Part Status

Discontinued at Digi-Key

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

4-VSFN Exposed Pad

Vgs(th) (Max) @ Id

3.7V @ 790µA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

190mOhm @ 7.9A, 10V

Series

DTMOSIV

Power Dissipation (Max)

139W (Tc)

FET Type

N-Channel

Supplier Device Package

4-DFN-EP (8x8)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V