Images are for reference only. See Product Specifications for product details
Toshiba Semiconductor and Storage TK11P65W,RQ
MOSFET N-CH 650V 11.1A DPAK-0S
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.79
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 5.6mOhm @ 20A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 5.2W (Ta), 25W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 10-PolarPAK® (U)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 38nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1510pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 45A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 10-PolarPAK® (U)
- Vgs(th) (Max) @ Id
- 2V @ 250µA