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Toshiba Semiconductor and Storage TK11A60D(STA4,Q,M)
MOSFET N-CH 600V 11A TO-220SIS
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 2.15
- Stock
- 0
Product Details
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 125mOhm @ 7.8A, 10V
- Series
- CoolMOS™ C7
- Power Dissipation (Max)
- 103W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-VSON-4
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 34nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1500pF @ 400V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 17A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 4-PowerTSFN
- Vgs(th) (Max) @ Id
- 4V @ 390µA