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Toshiba Semiconductor and Storage TK11A45D(STA4,Q,M)

MOSFET N-CH 450V 11A TO-220SIS

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
1.5
Stock
0

Product Details

Package / Case
TO-220-3 Full Pack
Vgs(th) (Max) @ Id
4.5V @ 1.7mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
290mOhm @ 8.5A, 10V
Series
PowerTrench®
Power Dissipation (Max)
40W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-220F
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
75nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
800V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
3205pF @ 100V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
17A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole