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Toshiba Semiconductor and Storage TK11A45D(STA4,Q,M)
MOSFET N-CH 450V 11A TO-220SIS
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 1.5
- Stock
- 0
Product Details
- Package / Case
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id
- 4.5V @ 1.7mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 290mOhm @ 8.5A, 10V
- Series
- PowerTrench®
- Power Dissipation (Max)
- 40W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220F
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 75nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 800V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3205pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 17A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole