Toshiba Semiconductor and Storage TK10A60W,S4X

Product Details

Vgs(th) (Max) @ Id

2.2V @ 140µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

1.2mOhm @ 100A, 10V

Series

Automotive, AEC-Q101, OptiMOS™

Power Dissipation (Max)

188W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO263-7-3

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

245nC @ 10V

Vgs (Max)

+20V, -16V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

19100pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)