Toshiba Semiconductor and Storage TK100E08N1,S1X

Product Details

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

4V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

130mOhm @ 14.5A, 10V

Series

-

Power Dissipation (Max)

40W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220FM

Packaging

Bulk

Gate Charge (Qg) (Max) @ Vgs

85nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2100pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

30A (Tc)