Toshiba Semiconductor and Storage TK100A08N1,S4X

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2080pF @ 100V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

23.8A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-247-3

Vgs(th) (Max) @ Id

4.5V @ 750µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

160mOhm @ 9A, 10V

Series

CoolMOS™ P6

Power Dissipation (Max)

176W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO247-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V