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Toshiba Semiconductor and Storage TJ80S04M3L(T6L1,NQ
MOSFET P-CH 40V 80A DPAK-3
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.88
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.5mOhm @ 25A, 10V
- Series
- -
- Power Dissipation (Max)
- 2.3W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- PowerDI5060-8
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 476nC @ 10V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 12826pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 60A (Tc)
- Part Status
- Discontinued at Digi-Key
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 1.4V @ 250µA