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Toshiba Semiconductor and Storage TBAS16,LM
DIODE GEN PURP 80V 215MA SOT23-3
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 765
Product Details
- Supplier Device Package
- SOT-23
- Reverse Recovery Time (trr)
- 50ns
- Current - Reverse Leakage @ Vr
- 100nA @ 100V
- Voltage - DC Reverse (Vr) (Max)
- 100V
- Speed
- Small Signal =< 200mA (Io), Any Speed
- Current - Average Rectified (Io)
- 200mA
- Series
- Automotive, AEC-Q101
- Operating Temperature - Junction
- -55°C ~ 150°C
- Packaging
- Cut Tape (CT)
- Voltage - Forward (Vf) (Max) @ If
- 1.25V @ 200mA
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Capacitance @ Vr, F
- 5pF @ 0V, 1MHz