Toshiba Semiconductor and Storage SSM6N7002BFE,LM

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

120mOhm @ 2.5A, 10V

Supplier Device Package

8-DFN (3x2)

Series

-

Gate Charge (Qg) (Max) @ Vgs

3.9nC @ 10V

FET Type

2 N-Channel (Dual)

Drain to Source Voltage (Vdss)

30V

Packaging

Digi-Reel®

Input Capacitance (Ciss) (Max) @ Vds

190pF @ 25V

FET Feature

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C

2.9A

Part Status

Obsolete

Power - Max

1.7W

Mounting Type

Surface Mount

Package / Case

8-WDFN Exposed Pad

Vgs(th) (Max) @ Id

3V @ 250µA