Toshiba Semiconductor and Storage SSM6N57NU,LF

Product Details

Rds On (Max) @ Id, Vgs

30mOhm @ 6A, 10V

Supplier Device Package

8-SOIC

Series

-

Gate Charge (Qg) (Max) @ Vgs

6.3nC @ 10V

FET Type

N and P-Channel, Common Drain

Drain to Source Voltage (Vdss)

30V

Packaging

Digi-Reel®

Input Capacitance (Ciss) (Max) @ Vds

310pF @ 15V

FET Feature

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C

6A, 5.5A

Part Status

Active

Power - Max

2W

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

2.4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)