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Toshiba Semiconductor and Storage SSM6N55NU,LF

MOSFET 2N-CH 30V 4A UDFN6

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
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Stock
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Product Details

Gate Charge (Qg) (Max) @ Vgs
6nC @ 4.5V
Series
AlphaMOS
Drain to Source Voltage (Vdss)
30V
FET Type
2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds
215pF @ 15V
FET Feature
Standard
Current - Continuous Drain (Id) @ 25°C
4.5A (Ta)
Part Status
Active
Power - Max
1.7W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id
2.5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
46mOhm @ 4.5A, 10V
Supplier Device Package
8-SOIC