Toshiba Semiconductor and Storage SSM6N44FE,LM

Product Details

Series

Automotive, AEC-Q101, TrenchMOS™

Gate Charge (Qg) (Max) @ Vgs

0.72nC @ 4.5V

FET Type

2 P-Channel (Dual)

Drain to Source Voltage (Vdss)

30V

Packaging

Digi-Reel®

Input Capacitance (Ciss) (Max) @ Vds

46pF @ 15V

FET Feature

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C

220mA

Part Status

Active

Power - Max

500mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Vgs(th) (Max) @ Id

1.1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

4.1Ohm @ 200mA, 4.5V

Supplier Device Package

SOT-666