Toshiba Semiconductor and Storage SSM6N36FE,LM

Product Details

Series

-

Supplier Device Package

ES6 (1.6x1.6)

FET Type

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs

1.2nC @ 4V

Packaging

Tape & Reel (TR)

Drain to Source Voltage (Vdss)

20V

FET Feature

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds

43pF @ 10V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

330mA

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Base Part Number

SSM6P36

Vgs(th) (Max) @ Id

1V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

1.31Ohm @ 100mA, 4.5V