Toshiba Semiconductor and Storage SSM6N35FE,LM

Product Details

Rds On (Max) @ Id, Vgs

3Ohm @ 50mA, 4V

Series

-

Supplier Device Package

ES6 (1.6x1.6)

FET Type

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs

-

Packaging

Cut Tape (CT)

Drain to Source Voltage (Vdss)

20V

FET Feature

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds

9.5pF @ 3V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

180mA, 100mA

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Base Part Number

SSM6L35

Vgs(th) (Max) @ Id

1V @ 1mA

Operating Temperature

150°C (TJ)