Toshiba Semiconductor and Storage SSM6N35AFU,LF

Product Details

Series

U-MOSVII

Gate Charge (Qg) (Max) @ Vgs

-

FET Type

2 P-Channel (Dual)

Drain to Source Voltage (Vdss)

20V

Packaging

Digi-Reel®

Input Capacitance (Ciss) (Max) @ Vds

42pF @ 10V

FET Feature

Logic Level Gate, 1.2V Drive

Current - Continuous Drain (Id) @ 25°C

250mA (Ta)

Part Status

Active

Power - Max

285mW (Ta)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Vgs(th) (Max) @ Id

1V @ 100µA

Operating Temperature

150°C

Rds On (Max) @ Id, Vgs

1.4Ohm @ 150mA, 4.5V

Supplier Device Package

US6