Toshiba Semiconductor and Storage SSM6L61NU,LF

Product Details

FET Feature

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds

-

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

180mA, 145mA

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Base Part Number

SI1035

Vgs(th) (Max) @ Id

400mV @ 250µA (Min)

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

5Ohm @ 200mA, 4.5V

Series

TrenchFET®

Supplier Device Package

SC-89-6

FET Type

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs

0.75nC @ 4.5V

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

20V