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Toshiba Semiconductor and Storage SSM6L39TU,LF
MOSFET N/P-CH 20V 0.8A UF6
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Supplier Device Package
- UF6
- Gate Charge (Qg) (Max) @ Vgs
- 7.5nC @ 4V
- Series
- -
- Drain to Source Voltage (Vdss)
- 20V
- FET Type
- 2 N-Channel (Dual)
- Input Capacitance (Ciss) (Max) @ Vds
- 260pF @ 10V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 1.6A (Ta)
- Part Status
- Active
- Power - Max
- 500mW
- Mounting Type
- Surface Mount
- Package / Case
- 6-SMD, Flat Leads
- Vgs(th) (Max) @ Id
- 1V @ 1mA
- Operating Temperature
- 150°C
- Rds On (Max) @ Id, Vgs
- 119mOhm @ 1A, 4V