Toshiba Semiconductor and Storage SSM6K781G,LF

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Mounting Type

Surface Mount

Package / Case

SC-96

Vgs(th) (Max) @ Id

3V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

190mOhm @ 2A, 10V

Series

-

Power Dissipation (Max)

540mW (Ta)

FET Type

P-Channel

Supplier Device Package

TSMT3

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

9.5nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

45V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

500pF @ 10V