Toshiba Semiconductor and Storage SSM6K504NU,LF

Product Details

FET Type

P-Channel

Supplier Device Package

4-MICRO FOOT® (0.8x0.8)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

580pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2.7A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

4-XFBGA

Vgs(th) (Max) @ Id

800mV @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

95mOhm @ 1A, 4.5V

Series

TrenchFET® Gen III

Power Dissipation (Max)

900mW (Tc)