Toshiba Semiconductor and Storage SSM6K407TU,LF

Product Details

Rds On (Max) @ Id, Vgs

17.8mOhm @ 8.7A, 4.5V

Series

TrenchFET® Gen III

Power Dissipation (Max)

3.6W (Tc)

FET Type

P-Channel

Supplier Device Package

6-TSOP

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

57nC @ 8V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

12V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1975pF @ 6V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Vgs(th) (Max) @ Id

1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)