Toshiba Semiconductor and Storage SSM6K406TU,LF

Product Details

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Base Part Number

STQ2

Vgs(th) (Max) @ Id

4.5V @ 50µA

Operating Temperature

150°C (TJ)

Series

SuperMESH3™

Rds On (Max) @ Id, Vgs

4.5Ohm @ 1A, 10V

FET Type

N-Channel

Power Dissipation (Max)

2.5W (Tc)

Packaging

Cut Tape (CT)

Supplier Device Package

TO-92-3

Vgs (Max)

±30V

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

235pF @ 50V

Part Status

Discontinued at Digi-Key

Current - Continuous Drain (Id) @ 25°C

600mA (Tc)