Toshiba Semiconductor and Storage SSM6K217FE,LF

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1331pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 8V

Mounting Type

Surface Mount

Package / Case

SOT-23-3 Flat Leads

Vgs(th) (Max) @ Id

1V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

22.1mOhm @ 6A, 8V

Series

U-MOSVII

Power Dissipation (Max)

1W (Ta)

FET Type

P-Channel

Supplier Device Package

SOT-23F

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

38.5nC @ 8V

Vgs (Max)

±10V

Drain to Source Voltage (Vdss)

20V