Toshiba Semiconductor and Storage SSM6K211FE,LF

Product Details

Vgs (Max)

12V

Drain to Source Voltage (Vdss)

50V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

280mA (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 10V

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

1V @ 250µA

Operating Temperature

-65°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

2Ohm @ 50mA, 5V

Series

-

Power Dissipation (Max)

350mW (Ta)

FET Type

N-Channel

Supplier Device Package

SOT-23

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

0.76nC @ 4.5V