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Toshiba Semiconductor and Storage SSM6K204FE,LF
MOSFET N-CH 30V ES6
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.15
- Stock
- 0
Product Details
- Series
- -
- Power Dissipation (Max)
- 1.38W
- FET Type
- N-Channel
- Supplier Device Package
- X2-DFN1006-3
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 1.52nC @ 4.5V
- Vgs (Max)
- 12V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 150pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 3.2A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 8V
- Mounting Type
- Surface Mount
- Package / Case
- 3-XFDFN
- Vgs(th) (Max) @ Id
- 1.1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 69mOhm @ 500mA, 8V