Toshiba Semiconductor and Storage SSM6J771G,LF

Product Details

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

39mOhm @ 11A, 10V

Series

-

Power Dissipation (Max)

3.3W (Ta), 43W (Tc)

FET Type

N-Channel

Supplier Device Package

DPAK-3

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

675pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V