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Toshiba Semiconductor and Storage SSM6J53FE(TE85L,F)
MOSFET P-CH 20V 1.8A ES6
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 2.2V @ 100µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 20mOhm @ 12.5A, 10V
- Series
- OptiMOS™
- Power Dissipation (Max)
- 2.5W (Ta), 63W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- PG-TDSON-8-1
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 48.5nC @ 10V
- Vgs (Max)
- ±25V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2430pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 9.9A (Ta), 12.5A (Tc)