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Toshiba Semiconductor and Storage SSM6J51TUTE85LF
MOSFET P-CH 12V 4A UF6
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 136mOhm @ 1A, 2.5V
- Series
- -
- Power Dissipation (Max)
- 500mW (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- ES6 (1.6x1.6)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 10.6nC @ 4V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 568pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 1.8A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 1.5V, 2.5V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Vgs(th) (Max) @ Id
- 1V @ 1mA
- Operating Temperature
- 150°C (TJ)