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Toshiba Semiconductor and Storage SSM6J512NU,LF
MOSFET P-CH 12V 10A UDFN6B
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 1625
Product Details
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 3.5V @ 1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 20Ohm @ 150mA, 10V
- Series
- -
- Power Dissipation (Max)
- 330mW (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- SOT-23-3
- Packaging
- Cut Tape (CT)
- Drain to Source Voltage (Vdss)
- 100V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 50pF @ 25V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 75mA (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V