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Toshiba Semiconductor and Storage SSM6J507NU,LF

MOSFET P-CH 30V 10A 6UDFN

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0.16
Stock
0

Product Details

Vgs(th) (Max) @ Id
1.5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
33mOhm @ 5.5A, 4.5V
Series
PowerTrench®
Power Dissipation (Max)
1.6W (Ta)
FET Type
P-Channel
Supplier Device Package
SuperSOT™-6
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
30nC @ 4.5V
Vgs (Max)
±8V
Drain to Source Voltage (Vdss)
20V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
1926pF @ 10V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
5.5A (Ta)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6