Toshiba Semiconductor and Storage SSM6J503NU,LF

Product Details

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

93nC @ 8V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

12V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 6V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

-

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount

Package / Case

4-UFBGA

Vgs(th) (Max) @ Id

700mV @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

19mOhm @ 3A, 4.5V

Series

TrenchFET®

Power Dissipation (Max)

1.1W (Ta), 2.7W (Tc)

FET Type

P-Channel

Supplier Device Package

4-MICRO FOOT® (1.6x1.6)