Images are for reference only. See Product Specifications for product details
Toshiba Semiconductor and Storage SSM6J502NU,LF
MOSFET P CH 20V 6A 2-2AA1A
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 5433
Product Details
- Rds On (Max) @ Id, Vgs
- 78mOhm @ 3.2A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 750mW (Ta)
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 15nC @ 10V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 30V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 380pF @ 15V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 2.5A (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)