Toshiba Semiconductor and Storage SSM6J215FE(TE85L,F

Product Details

FET Type

N-Channel

Supplier Device Package

U-DFN3030-8

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

9.47nC @ 5V

Vgs (Max)

±25V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

798pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

7.44A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerUDFN

Vgs(th) (Max) @ Id

1.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

17mOhm @ 9A, 10V

Series

-

Power Dissipation (Max)

940mW (Ta)