Toshiba Semiconductor and Storage SSM6J212FE,LF

Product Details

Rds On (Max) @ Id, Vgs

6.5mOhm @ 12A, 10V

Series

-

Power Dissipation (Max)

1.1W (Ta)

FET Type

N-Channel

Supplier Device Package

V-DFN3030-8

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

22.6nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1320pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

17.1A (Ta), 46.2A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Vgs(th) (Max) @ Id

3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)