Toshiba Semiconductor and Storage SSM6H19NU,LF

Product Details

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

30mOhm @ 4A, 4.5V

Series

TrenchFET®

Power Dissipation (Max)

960mW (Ta), 1.7W (Tc)

FET Type

N-Channel

Supplier Device Package

SOT-23-3 (TO-236)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

735pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta), 5.9A (Tc)