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Toshiba Semiconductor and Storage SSM5H16TU,LF

SMALL SIGNAL MOSFET N-CH + SBD V

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
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Product Details

Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
14mOhm @ 8A, 10V
Series
-
Power Dissipation (Max)
1.6W
FET Type
N-Channel
Supplier Device Package
SOT-23-6L
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
13nC @ 5V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
30V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 15V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Vgs(th) (Max) @ Id
3V @ 250µA