Toshiba Semiconductor and Storage SSM4K27CTTPL3

Product Details

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

123pF @ 15V

FET Feature

Schottky Diode (Isolated)

Current - Continuous Drain (Id) @ 25°C

1.9A (Ta)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4V

Mounting Type

Surface Mount

Package / Case

6-SMD (5 Leads), Flat Lead

Vgs(th) (Max) @ Id

1V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

133mOhm @ 1A, 4V

Series

U-MOSIII

Power Dissipation (Max)

500mW (Ta)

FET Type

N-Channel

Supplier Device Package

UFV

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

1.9nC @ 4V