Toshiba Semiconductor and Storage SSM3K7002KFU,LF

Product Details

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

2.5Ohm @ 240mA, 10V

Series

-

Power Dissipation (Max)

300mW (Tj)

FET Type

N-Channel

Supplier Device Package

SOT-23-3 (TO-236)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

0.81nC @ 5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

26.7pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

260mA (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3