Toshiba Semiconductor and Storage SSM3K59CTB,L3F

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

10.5A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Vgs(th) (Max) @ Id

2.4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

17mOhm @ 9A, 10V

Series

-

Power Dissipation (Max)

3.1W (Ta)

FET Type

N-Channel

Supplier Device Package

8-DFN (2.9x2.3)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

690pF @ 15V