Toshiba Semiconductor and Storage SSM3K37CT,L3F

Product Details

FET Type

N-Channel

Supplier Device Package

TO-236AB

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

1.3nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

55pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

300mA (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

1.6Ohm @ 500mA, 10V

Series

Automotive, AEC-Q101, TrenchMOS™

Power Dissipation (Max)

350mW (Ta)