Toshiba Semiconductor and Storage SSM3K376R,LF

Product Details

Rds On (Max) @ Id, Vgs

1.6Ohm @ 500mA, 10V

Series

Automotive, AEC-Q101, TrenchMOS™

Power Dissipation (Max)

360mW (Ta)

FET Type

N-Channel

Supplier Device Package

DFN1006-3

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

0.6nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

450mA (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

SC-101, SOT-883

Vgs(th) (Max) @ Id

2.1V @ 250µA

Operating Temperature

150°C (TJ)